 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| e PTB 20147 2.5 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20147 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 2.5 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 2.5 Watts, 1.8-2.0 GHz Class AB Characteristics 35% Collector Efficiency at 4 Watts Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power 6 5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 VCC = 26 V ICQ = 40 mA f = 2.0 GHz Output Power (Watts) 20 14 7 LO TC OD E Input Power (Watts) Package 20208 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) 1 9/28/98 TSTG RJC Symbol VCER VCBO VEBO IC PD Value 50 50 4.0 1.0 10 0.057 -40 to +150 17.5 Unit Vdc Vdc Vdc Adc Watts W/C C C/W PTB 20147 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 10 mA IB = 0 A, IC = 10 mA, RBE = 22 IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CES V(BR)CER V(BR)EBO hFE Min 50 50 4 20 Typ -- -- 5 40 Max -- -- -- -- Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 2.5 W, ICQ = 40 mA, f = 2.0 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 40 mA, f = 2.0 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 1.17 W, ICQ = 40 mA, f = 2.0 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 2.5 W, ICQ = 40 mA, f = 2.0 GHz--all phase angles at frequency of test) Symbol Gpe P-1dB C Min 8 2.5 20 -- Typ 10 4 -- -- Max -- -- -- 5:1 Units dB Watts % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 2.5 W, ICQ = 40 mA) Z Source Z Load Frequency GHz 1.8 1.9 2.0 R 30.0 22.9 17.7 Z Source jX -2.45 0.00 5.14 R 5.65 7.23 6.30 Z Load jX 13.1 13.8 11.9 Z0 = 50 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1995 EUS/KR 1301-PTB 20147 Uen Rev. D 09-28-98 2 |
Price & Availability of PTB20147
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |